Enhance your electronic projects with the PHN203 IC, a high-performance Dual N-channel enhancement mode Field-Effect Transistor (FET) built using innovative TrenchMOS technology. While not recommended for new designs, this IC remains a reliable choice for a variety of computing, communications, consumer, and industrial applications.
Key Features and Benefits:
- Fast switching characteristics make it suitable for high-frequency applications.
- Designed to accommodate logic level gate drive sources for seamless integration into your circuitry.
Applications:
- DC-to-DC converters
- Lithium-ion battery applications
Unlock the potential of your projects with the PHN203 IC, offering dependable performance and versatile applications in a compact plastic package.
Specifications:
Specification | Details |
---|---|
Type | Dual N-channel TrenchMOS Logic Level FET |
Status | Not recommended for new designs (NRND) |
Package | Plastic |
Technology | TrenchMOS |
Applications | Computing, communications, consumer, industrial |
Package Include:
1 x PHN203 IC